eGaN® FET DATASHEET
EPC2214 – Automotive 80 V (D-S)
Enhancement Mode Power Transistor
VDS , 80 V RDS(on) , 20 mΩ ID , 10 A, AEC-Q101
G
D S
EPC2214
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 60 years. GaN’s exce...
