diode. BAS116H Datasheet

BAS116H Datasheet PDF


Part

BAS116H

Description

Low leakage switching diode

Manufacture

nexperia

Page 10 Pages
Datasheet
Download BAS116H Datasheet


BAS116H Datasheet
BAS116H
Low leakage switching diode
Rev. 3 — 31 May 2011
Product data sheet
1. Product profile
1.1 General description
Low leakage switching diode, encapsulated in a SOD123F small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Small and flat lead SMD plastic package
Low leakage current
Excellent coplanarity and improved thermal behavior
AEC-Q101 qualified
1.3 Applications
General-purpose switching
1.4 Quick reference data
Table 1.
Symbol
IF
IR
VR
trr
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
Conditions
VR = 75 V
Min
[1][2] -
-
-
[3] -
Typ
-
0.003
-
0.8
Max
215
5.0
75
3.0
Unit
mA
nA
V
s
[1] Pulse test: tp 300 s;   0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
Simplified outline
[1]
12
Graphic symbol
12
sym001

BAS116H Datasheet
Nexperia
BAS116H
Low leakage switching diode
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BAS116H
-
plastic surface-mounted package; 2 leads
Version
SOD123F
4. Marking
Table 4. Marking codes
Type number
BAS116H
Marking code
B1
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
voltage
-
VR reverse voltage
IF forward current
IFRM
repetitive peak forward
current
-
[1][2] -
-
IFSM
Ptot
non-repetitive peak forward
current
total power dissipation
square wave
tp = 1 s
tp = 1 ms
tp = 1 s
Tamb 25 C
[3]
-
-
-
[1][4] -
[5]
Max
85
75
215
500
4
1
0.5
375
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
- 150
65 +150
65 +150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Pulse test: tp 300 s;   0.02.
[3] Tj = 25 C prior to surge.
[4] Reflow soldering is the only recommended soldering method.
[5] Soldering point of cathode tab.
Unit
V
V
mA
mA
A
A
A
mW
C
C
C
BAS116H
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 31 May 2011
© Nexperia B.V. 2017. All rights reserved
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Features Datasheet pdf BAS116H Low leakage switching diode Rev. 3 — 31 May 2011 Product data sheet 1. Product profile 1.1 General descri ption Low leakage switching diode, enca psulated in a SOD123F small and flat le ad Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Small and flat lead SMD plastic packa ge  Low leakage current  Excellen t coplanarity and improved thermal beha vior  AEC-Q101 qualified 1.3 Applic ations  General-purpose switching 1 .4 Quick reference data Table 1. Symbo l IF IR VR trr Quick reference data Pa rameter forward current reverse current reverse voltage reverse recovery time Conditions VR = 75 V Min [1][2] - [3] - Typ 0.003 0.8 Max 215 5.0 75 3.0 Unit mA nA V s [1] Pulse test: tp 300 s;   0.02. [2] Device m ounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] When switch ed from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. 2. Pinning information Table 2. Pin 1 2 Pinning Desc.
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