2SK3492 MOSFET Datasheet

2SK3492 Datasheet PDF, Equivalent


Part Number

2SK3492

Description

N-Channel Silicon MOSFET

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download 2SK3492 Datasheet


2SK3492
2SK3492
Ordering number : ENN8279
2SK3492
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=10V
ID=4A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
60
±20
8
32
1
15
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
60
1.2
3
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
5S
115 150 m
155 220 m
300 pF
54 pF
34 pF
8 ns
32 ns
30 ns
44 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK3492/D

2SK3492
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7518-004
2SK3492
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=8A
VDS=30V, VGS=10V, ID=8A
VDS=30V, VGS=10V, ID=8A
IS=8A, VGS=0V
Ratings
min typ max
Unit
7.8 nC
2.4 nC
1.7 nC
0.9 1.2 V
Package Dimensions
unit : mm
7003-004
6.5 2.3
5.0 0.5
4
6.5 2.3
5.0 0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Switching Time Test Circuit
VDD=30V
VIN
10V
0V
PW=10µs
D.C.1%
VIN
G
ID=4A
RL=7.5
D VOUT
P.G 50
S 2SK3492
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
ID -- VDS
8
7 5.0V 4.0V
ID -- VGS
8
VDS=10V
7
6 6.0V 6
VGS=3.5V
55
44
33
22
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Drain-to-Source Voltage, VDS -- V IT09598
1
0
0123456
Gate-to-Source Voltage, VGS -- V IT09599
Rev.0 I Page 2 of 4 I www.onsemi.com


Features 2SK3492 Ordering number : ENN8279 2SK3 492 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V driv e. N-Channel Silicon MOSFET General-Pu rpose Switching Device Applications Sp ecifications Absolute Maximum Ratings a t Ta=25°C Parameter Drain-to-Source V oltage Gate-to-Source Voltage Drain Cur rent (DC) Drain Current (Pulse) Allowab le Power Dissipation Channel Temperatur e Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Charact eristics at Ta=25°C Conditions PW≤1 0µs, duty cycle≤1% Tc=25°C Paramet er Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Dr ain Current Gate-to-Source Leakage Curr ent Cutoff Voltage Forward Transfer Adm ittance Static Drain-to-Source On-State Resistance Input Capacitance Output Ca pacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF D elay Time Fall Time V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 C iss Coss Crss td(on) tr td(off) tf ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=.
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