Silicon MOSFET. 2SK3492 Datasheet

2SK3492 MOSFET. Datasheet pdf. Equivalent

2SK3492 Datasheet
Recommendation 2SK3492 Datasheet
Part 2SK3492
Description N-Channel Silicon MOSFET
Feature 2SK3492; 2SK3492 Ordering number : ENN8279 2SK3492 Features • Low ON-resistance. • Ultrahigh-speed switchin.
Manufacture ON Semiconductor
Datasheet
Download 2SK3492 Datasheet





ON Semiconductor 2SK3492
2SK3492
Ordering number : ENN8279
2SK3492
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=10V
ID=4A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
60
±20
8
32
1
15
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
60
1.2
3
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
5S
115 150 m
155 220 m
300 pF
54 pF
34 pF
8 ns
32 ns
30 ns
44 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK3492/D



ON Semiconductor 2SK3492
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7518-004
2SK3492
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=8A
VDS=30V, VGS=10V, ID=8A
VDS=30V, VGS=10V, ID=8A
IS=8A, VGS=0V
Ratings
min typ max
Unit
7.8 nC
2.4 nC
1.7 nC
0.9 1.2 V
Package Dimensions
unit : mm
7003-004
6.5 2.3
5.0 0.5
4
6.5 2.3
5.0 0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Switching Time Test Circuit
VDD=30V
VIN
10V
0V
PW=10µs
D.C.1%
VIN
G
ID=4A
RL=7.5
D VOUT
P.G 50
S 2SK3492
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
ID -- VDS
8
7 5.0V 4.0V
ID -- VGS
8
VDS=10V
7
6 6.0V 6
VGS=3.5V
55
44
33
22
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Drain-to-Source Voltage, VDS -- V IT09598
1
0
0123456
Gate-to-Source Voltage, VGS -- V IT09599
Rev.0 I Page 2 of 4 I www.onsemi.com



ON Semiconductor 2SK3492
2SK3492
RDS(on) -- VGS
350
Ta=25°C
ID=4A
300
350
300
250
250
200
200
150
150
100
100 50
RDS(on) -- Ta
I D=ID4A=4, AV,GVS=G4SV=10V
50
0 2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V
yfs-- ID
10
7 VDS=10V
5
18 20
IT09600
3
2 Ta= --25°C75°C
0.1
7 25°C
5
3
2
0.01
0.01
100
7
5
3
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
td(off)
tf
2 3 5 7 10
IT09602
VDD=30V
VGS=10V
2
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09601
IS -- VSD
10
7 VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
7
5
0.4 0.6 0.8 1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
1.2
IT09603
f=1MHz
Ciss
3
2
10 td(on)
7
5 tr
3
2
1.0
0.1
23
10
VDS=30V
9 ID=8A
8
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
7
6
5
4
3
2
1
0
0123456
Total Gate Charge, Qg -- nC
5 7 10
IT09604
78
IT09606
100
7 Coss
5
Crss
3
2
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT09605
ASO
7
5 IDP=32A
3
<10µs
2
10 ID=8A
7
5
3
2
1.0
7
100µs
DC
10m1sms
Operation
5
3
2 Operation in this
100ms
0.1 area is limited by RDS(on).
7
5
3
2
Tc=25°C
0.01 Single pulse
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT09607
Rev.0 I Page 3 of 4 I www.onsemi.com





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