NTE2991 MOSFET Datasheet

NTE2991 Datasheet, PDF, Equivalent


Part Number

NTE2991

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2991 Datasheet


NTE2991
NTE2991
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Ultra Low OnResistance
D Dynamic dv/dt Rating
D +175C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
D
G
Absolute Maximum Ratings:
S
Drain
CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(0VC2GC)(SN..=o.. ..t1e..0..1V..))..
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110A
. 80A
390A
Total
PDowerearteDiAsbsiopvaetio2n5(CTC.
=
..
+25C),
.......
.P.D.
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. . 200W
1.3W/C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Single Pulsed Avalanche Energy (IAS = 62A, L = 138H, Note 3), EAS . . . . . . . . . . . . . . . . . . 264mJ
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C
Maximum Thermal Resistance:
JJuunnccttiioonn−−ttoo−−CAmasbeie, nRtt,hRJCthJ.A.
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0.75C/W
. 62C/W
Typical Thermal Resistance, CasetoSink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.50C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. This is a calculated value limited to TJ = +175C.
Note 4. ISD 62A, di/dt 207A/s, VDD V(BR)DSS, TJ +175C.
Rev. 519

NTE2991
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 250A
Breakdown Voltage Temperature
Coefficient
V(BRT)JDSS/ Reference to +25C, ID = 1mA
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 62A, Note 5
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250A
Forward Transconductance
gfs VDS = 25V, ID = 62A, Note 5
DraintoSource Leakage Current
IDSS
VDS = 55V, VGS = 0
VDS = 44V, VGS = 0V, TC = +150C
GateSource Leakage Forward
IGSS
VGS = 20V
GateSource Leakage Reverse
IGSS
VGS = 20V
Total Gate Charge
Qg VGS = 10V, ID = 62A, VDS = 44V
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VVDGDS
=
=
2180VV,,
INDo=te652A,
RG
=
4.5,
TurnOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD
LS
Between lead, 6mm (0.25”) from
package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceDrain Diode Ratings and Characteristics
55 − − V
0.057 V/C
− − 8.0 m
2.0 4.0 V
44
mhos
− − 25 A
− − 250 A
− − 100 nA
− − −100 nA
− − 146 nC
− − 35 nC
− − 54 nC
14 ns
101 ns
50 ns
65 ns
4.5 nH
7.5 nH
3247 pF
781 pF
211 pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS (Body Diode)
− − 110 A
ISM (Body Diode) Note 2
− − 390 A
VSD TJ = +25C, IS = 62A, VGS = 0V, Note 5
1.3 V
trr
Qrr
TNJot=e+525C, IF = 62A, di/dt = 100A/s,
69 104 ns
143 215 C
ton
Intrinsic turnon time is neglegible
(turnon is dominated by LS + LD)
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Width 400s, Duty Cycle 2%.


Features NTE2991 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Packa ge Features: D Ultra Low On−Resistan ce D Dynamic dv/dt Rating D +175C Op erating Temperature D Fast Switching D Fully Avalanche Rated D G Absolute Ma ximum Ratings: S Drain CCPuuorlnrsTT eteiCCnndtu==,(oIN++Duo21st50e(0VC2 GC)(SN..=o.. ..t1e..0..1V..)).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A . 80A 390A Total PDowerearteDiAsbsiopvaetio2n5 (CTC. = .. +25C), ....... .P.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keywords NTE2991, datasheet, pdf, NTE, N-Channel, MOSFET, TE2991, E2991, 2991, NTE299, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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