NTE2995 MOSFET Datasheet

NTE2995 Datasheet, PDF, Equivalent


Part Number

NTE2995

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2995 Datasheet


NTE2995
NTE2995
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D RDS(on) = 0.65Typical
D Extremely High dv/dt Capability
D Gate Charge Minimized
D GatetoSource Zener Diode Protected
Applications:
D High Current, High Speed Switching
D Ideal for OffLine Power Supplies, Adaptor and PFC
D Lighting
D
G
S
Absolute Maximum Ratings:
DrainSource Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous
TTCC
=
=
+25°C .
+100°C
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10A
5.7A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Total Power Dissiption (TC = +25°C), PTOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.92W/°C
GateSource ESD Voltage (HBM C = 100pF, R = 1.5k), Vesd(GS) . . . . . . . . . . . . . . . . . . . . . 4000V
Peak Diode Recovery Voltage Slope (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Avalanche Current, Repetitive or NonRepetitive (Pulse Width Limited by TJmax), IAR . . . . . . . 9A
Single Pulse Avalanche Energy (Starting TJ = +25°C, ID = IAR, VDD = 50V), EAS . . . . . . . . . 300mJ
Repetitive Avalanche Energy (Pulse Width Limited by TJmax), EAR . . . . . . . . . . . . . . . . . . . . . 3.5mJ
Minimum GateSource Breakdown Voltage (IGS = ±1mA, Open Drain, Note 3), V(BR)GSO . . . . 30V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09°C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. Pulse width limited by safe operating area.
Note 2. ISD 10A, di/dt 200A/µs, VDD V(BR)DSS, TJ TJmax.
Note 3. The builtin backtoback Zener diodes have specifically been designed to enhance not
only the device’s ESD capability, but also to make them safely absorb possible voltage tran-
sients that may occasionally be applied from gate to source. In this respect their Zener volt-
age is appropriate to achieve an efficient and costeffective intervention to protect the de-
vice’s integrity. These integrated Zener diodes thus avoid the usage of external components.

NTE2995
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON/OFF
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Gate Threshold Voltage
Static DrainSource ON Resistance
Dynamic
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
ID = 250µA, VGS = 0
VDS = Max Rating
VDS = Max Rating, TJ = +125°C
VGS = ±15V, VDS = 0
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.5A
600
−−1
− − 50
− − ±10
3.0 3.75 4.5
0.65 0.75
V
µA
µA
µA
V
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance
Total Gate Charge
GateSource Charge
GateDrain Charge
Switching ON/OFF
gfs
Ciss
Coss
Crss
Coss eq.
Qg
Qgs
Qgd
VDS = 15V, ID = 4.5A, Note 4
VDS = 25V, f = 1MHz, VGS = 0
VGS = 0, VDS = 0V to 480V, Note 5
VDD = 480V, ID = 8A, VGS = 10V
7.8
1370
156
37
90
50 70
10
25
S
pF
pF
pF
pF
nC
nC
nC
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
OffVoltage Rise Time
Fall Time
Crossover Time
SourceDrain Diode
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
VVDGDS
=
=
300V,
10V
ID
=
4A,
RG
=
4.7,
VDD = 480V, ID = 8A, RG = 4.7,
VGS = 10V
20 ns
20 ns
55 ns
30 ns
18 ns
18 ns
36 ns
SourceDrain Current
SourceDrain Current, Pulsed
Forward ON Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD
ISDM
VSD
trr
Qrr
IRRM
Note 1
ISD = 10A, VGS = 0, Note 4
IVSDDD==84A0,Vd,i/TdJt
=
=
100A/µs,
+150°C
− − 10 A
− − 36 A
− − 1.6 V
570 ns
4.3 µC
15
A
Note 1. Pulse width limited by safe operating area.
Note 4. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
Note 5. CCoossss ewqh. eisndVeDfiSneindcaresaasecsonfrsotman0t etoqu8iv0a%le.nt capacitance giving the same charging time as


Features NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS (on) = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimiz ed D Gate−to−Source Zener Diode Pro tected Applications: D High Current, Hi gh Speed Switching D Ideal for Off−Li ne Power Supplies, Adaptor and PFC D Li ghting D G S Absolute Maximum Ratings : Drain−Source Voltage (VGS = 0), VD S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain−Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current, ID Continuous TTCC = = +25°C . +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Keywords NTE2995, datasheet, pdf, NTE, N-Channel, MOSFET, TE2995, E2995, 2995, NTE299, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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