NTE2997 MOSFET Datasheet

NTE2997 Datasheet, PDF, Equivalent


Part Number

NTE2997

Description

P-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2997 Datasheet


NTE2997
NTE2997
MOSFET
PChannel, Enhancement Mode
High Speed Switch
Features:
D Good Frequency Characteristics
D High Speed Switching
D Wide Area of Safe Operation
D Enhancement Mode
D Equipped with Gate Protection Diodes
Applications:
D Low Frequency Power Amplifier
D
G
S
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
DrainSource Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Body to Drain Diode Reverse Drain Current, IDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Channel Dissiption (TC = +25°C), PCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Channel Temperature TCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
GateSource Breakdown Voltage
GateSource Cutoff Voltage
DrainSource Saturation Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance
TurnOn Time
TurnOff Time
V(BR)DSS ID = 10mA, VGS = 10V
160
V(BR)GSS IG = ±100µA, VDS = 0
±15
VGS(off) ID = 100mA, VDS = 10V
0.15 1.45
VDS(sat) ID = 7A, VGS = 0, Note 1
− − 12
|yfs| ID = 3A, VDS = 10V, Note 1
0.7 1.0 1.4
Ciss VDS = 10V, f = 1MHz, VGS = 5V
900
Coss
400
Crss 40
Coss eq. VGS = 0, VDS = 0V to 480V, Note 5 90
ton VDD = 20V, ID = 4A
230
toff 110
V
V
V
V
S
pF
pF
pF
pF
ns
ns
Note 1. Pulse test.

NTE2997
.190 (4.82)
.787
(20.0)
.615 (15.62)
S
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
GS D
.215 (5.47)


Features NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Goo d Frequency Characteristics D High Spee d Switching D Wide Area of Safe Operati on D Enhancement Mode D Equipped with G ate Protection Diodes Applications: D L ow Frequency Power Amplifier D G S Ab solute Maximum Ratings: (TA = +25°C un less otherwise specified) Drain−Sourc e Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Body to Drain Diode Reverse Drai n Current, IDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Channel Dissiption (TC = +25°C), PCH . . . . . . . . . . . . . . . . . . . . . . . . . . ..
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