NTE2998 MOSFET Datasheet

NTE2998 Datasheet, PDF, Equivalent


Part Number

NTE2998

Description

P-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2998 Datasheet


NTE2998
NTE2998
MOSFET
PChannel, Enhancement Mode
High Speed Switch
(Compl to NTE2906)
TO3 Type Package
Features:
D High Speed Switching
D High Voltage
D High Energy Rating
D Enhancement Mode
D Integral Protection Diode
G
D
S
Absolute Maximum Ratings: (TC = +25 C unless otherwise specified)
DrainSource Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m14V
Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25 C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150 C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 C/W
Electrical Characteristics: (TC = +25 C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
DrainSource Breakdown Voltage
GateSource Breakdown Voltage
GateSource CutOff Voltage
DrainSource Saturation Voltage
DrainSource CutOff Current
Forward Transfer Admittance
BVDSX
BVGSS
VGS(OFF)
VDS(SAT)
IDSX
yfs
VGS = 10V, ID = 10mA
VDS = 0, IG = m100mA
VDS = 10V, ID = 100mA
VGD = 0, ID = 8A, Note 1
VGS = 10V, VDS = 200V
VDS = 10V, ID = 3A, Note 1
Note 1. Pulse Test: Pulse Width = 300ms, Duty Cycle 2%.
Min Typ Max Unit
200
m14
0.15
−−
−−
0.7
V
V
1.5 V
12 V
10 mA
2.0 S
Rev. 1013

NTE2998
Electrical Characteristics (Cont’d): (TC = +25 C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Input Capacitance
Output Capacitance
Ciss
Coss
VDS = 10V, f = 1MHz
734
300
pF
pF
Reverse Transfer Capacitance
TurnOn Time
TurnOff Time
Crss
ton VDS = 20V, ID = 5A
toff
26
120
60
pF
ns
ns
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Drain
.215 (5.45)
.430
(10.92)
1.187 (30.16)
.665 (16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Gate
.525 (13.35) R Max
Source/Case


Features NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE290 6) TO3 Type Package Features: D High Sp eed Switching D High Voltage D High Ene rgy Rating D Enhancement Mode D Integra l Protection Diode G D S Absolute Ma ximum Ratings: (TC = +25 C unless other wise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m14V Conti nuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Body Drain Diod e, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipati on (TC = +25 C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.
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