NTE2904 MOSFET Datasheet

NTE2904 Datasheet, PDF, Equivalent


Part Number

NTE2904

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2904 Datasheet


NTE2904
NTE2904
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Advanced Process Technology
D Ultra Low OnResistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
G
D
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+255C . . . . . .
+1005C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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64A
45A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
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. . 7130W
0.83W/5C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.155C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.55C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. Starting TJ = +255C, L = 0.37mH, RG = 25W, IAS = 32A
Note 3. ISD 3 32A, di/dt 3 220A/ms, VDD 3 V(BR)DSS, TJ 3 +1755C
Rev. 714

NTE2904
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA
55 − − V
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
DV(BR)DSS
DTJ
RDS(on)
Reference to +255C, ID = 1mA
VGS = 10V, ID = 32A, Note 4
0.058 V/5C
− − 0.014 W
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250mA
2.0 4.0 V
Forward Transconductance
gfs VDS = 25V, ID = 32A, Note 4
24
mhos
DraintoSource Leakage Current
IDSS
VDS = 55V, VGS = 0V
− − 25 mA
VDS = 44V, VGS = 0V, TJ = +1505C − − 250 mA
GatetoSource Forward Leakage
IGSS
VGS = 20V
− − 100 nA
GatetoSource Reverse Leakage
IGSS
VGS = 20V
− − −100 nA
Total Gate Charge
Qg ID = 32A, VDS = 44V, VGS = 10V
− − 81 nC
GatetoSource Charge
Qgs
− − 19 nC
GatetoDrain (“Miller”) Charge
Qgd
− − 30 nC
TurnOn Delay Time
Rise Time
td(on) VDD = 28V, ID = 32A, RG = 0.85W, 12 ns
tr RD = 79 , Note 4
78 ns
TurnOff Delay Time
td(off)
34 ns
Fall Time
tf
50 ns
Internal Drain Inductance
Internal Source Inductance
LD Between lead, .250in. (6.0) mm from 4.5 nH
LS package and center of die contact 7.5 nH
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
1970 pF
Output Capacitance
Coss
470 pF
Reverse Transfer Capacitance
Crss
120 pF
Single Pulse Avalanche Energy
EAS IAS = 32A, L = 0.37mH, Note 2
700 190 mJ
Note 5 Note 6
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 1
VSD TJ = +255C, IS = 32A, VGS = 0V,
Note 4
− − 64 A
− − 210 A
− − 1.3 V
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +255C, IF = 32A,
Qrr di/dt = 100A/ms, Note 4
68 100 ns
220 330 mC
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 3 400ms; duty cycle 3 2%.
Note 5. This is the destructive value not limited to the thermal limit.
Note 6. This is the thermal limited value.


Features NTE2904 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Type Package Features: D Advanced Process Technolog y D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temper ature D Fast Switching D Fully Avalanch e Rated G D S Absolute Maximum Ratin gs: Continuous TTCC = = Drain Curre nt +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A 45A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 0A Power DDeisrsaitpeaLtiionnea(TrlCy A=b+o2v5e5C25),5PCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keywords NTE2904, datasheet, pdf, NTE, N-Channel, MOSFET, TE2904, E2904, 2904, NTE290, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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