NTE2905 MOSFET Datasheet

NTE2905 Datasheet, PDF, Equivalent


Part Number

NTE2905

Description

P-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2905 Datasheet


NTE2905
NTE2905
MOSFET
PCh, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D PChannel
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+25°C . . . . . .
+100°C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
......
......
.ID. .
...
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12A
7.5A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1.2W/°C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 790mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15°C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. Starting TJ = +25°C, L = 8.2mH, RG = 25Ω, IAS = 12A
Note 3. ISD 12A, di/dt 150A/μs, VDD V(BR)DSS, TJ +150°C

NTE2905
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
V(BR)DSS
ΔV(BR)DS
ΔST
RDJS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
VGS = 0V, ID = 250μA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 7.2A, Note 4
VDS = VGS, ID = 250μA
VDS = 50V, ID = 7.2A, Note 4
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = +125°C
VGS = 20V
VGS = 20V
ID = 11A, VDS = 160V, VGS = 10V
VDD = 100V, ID = 11A, RG = 9.1Ω,
RD = 8.6Ω, Note 4
Between lead, .250in. (6.0) mm from
package and center of die contact
VGS = 0V, VDS = 25V, f = 1MHz
200
2.0
4.2
Typ
-0.20
14
43
39
38
5.0
13
1200
370
81
Max
0.50
4.0
100
500
100
100
44
7.1
27
Unit
V
V/°C
Ω
V
S
μA
μA
nA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 1
VSD TJ = +25°C, IS = 32A, VGS = 0V,
Note 4
− − −12 A
− − −48 A
− − −5.0 V
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +25°C, IF = 32A,
Qrr di/dt = 100A/μs, Note 4
250 300 ns
2.9 3.6 μC
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ ≤00μs; duty cycle 2%.


Features NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch Features: D Dynamic d v/dt Rating D Repetitive Avalanche Rate d D P−Channel D Isolated Central Moun ting Hole D Fast Switching D Ease of Pa ralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25°C . . . . . . +100°C . . . . . .(V. .G.S. .... . = .. .. −10V), ...... ...... .ID . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −12A −7. 5A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −48A Power Diss ipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keywords NTE2905, datasheet, pdf, NTE, P-Channel, MOSFET, TE2905, E2905, 2905, NTE290, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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