NTE2919 MOSFET Datasheet

NTE2919 Datasheet, PDF, Equivalent


Part Number

NTE2919

Description

P-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2919 Datasheet


NTE2919
NTE2919
MOSFET
PCh, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
D
Features:
D Low ONResistance
D Ultra HighSpeed Switching
G
D 4V Drive
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DraintoSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Drain CCuornretinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Allowable
TTAC
=Po+w25erCDi.s.s.ip. a. t.io. .n.(.T.C.
= +25C . . . . . . . . . . . .
=
..
..
+25C),
.......
.P.D. .
...........
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2.0W
25W
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Note 1. Pulse Width 10s, Duty Cycle 1%.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
DraintoSource Breakdown Voltage
ZeroGate Voltage Drain Current
GatetoSource Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static DraintoSource OnResistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
VGS = 0V, ID = 1A
VDS = 60V, VGS = 0V
VGS = 16V, VDS = 0
VDS = 10V, ID = 1mA
VDS = 10V, ID = 10A
VGS = 10V, ID = 10A
VGS = 4V, ID = 10A
VDS = 20V, f = 1MHz
Min
60
1.2
11
Typ
17
45
65
2200
220
165
Max Unit
V
1 A
10 A
2.6 V
S
60 m
92 m
pF
pF
pF
Rev. 914

NTE2919
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
Diode Forward Voltage
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDD = 30V, ID = 10A, RL = 3,
Note 1
ID = 20A, VDS = 30V, VGS = 10V
IS = 20A, VGS = 0
Typ
18
115
190
120
0.95
Max
45
7.4
9
1.2
Unit
ns
ns
ns
ns
nC
nC
nC
V
Note 1. Pulse Width 10s, Duty Cycle 1%.
.283
(7.2)
.630
(16.0)
.394 (10.0)
.177 (4.5)
.138
(3.5)
.110 (2.8)
.551
(14.0)
Min
GDS
.220
(5.6)
.100 (2.54)
.094 (2.4)


Features NTE2919 MOSFET P−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Ty pe Package D Features: D Low ON−Re sistance D Ultra High−Speed Switching G D 4V Drive S Absolute Maximum Ra tings: (TA = +25C unless otherwise s pecified) Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −60V Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain CC uornretinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80A Allowable TTAC =Po+w25erCDi.s.s.ip. a. t.io. .n.(.T.C. = +25C . . . . . . . . . . . . = .. .. +25C), ....... .P.D. . ........... . . . . . . . . . . . . . . . ..
Keywords NTE2919, datasheet, pdf, NTE, P-Channel, MOSFET, TE2919, E2919, 2919, NTE291, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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