NTE2914 MOSFET Datasheet

NTE2914 Datasheet, PDF, Equivalent


Part Number

NTE2914

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2914 Datasheet


NTE2914
NTE2914
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220FM Type Package
Features:
D Low OnResistance: RDS = 0.026W Typ.
D High Speed Switching
D 4V Gate Drive Device can be Driven from 5V Source
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
DraintoSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
GatetoSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak Drain Current (Note 1), ID(pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
BodyDrain Diode Reverse Drain Current, IDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Avalanche Current (Note 2), IAP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34mJ
Channel Dissipation (TC = +255C), PCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Channel Temperature, TCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Note 1. Pulse width 3 10ms; duty cycle 3 1%.
Note 2. TCH = +255C, Rg = 50W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
DraintoSource Breakdown Voltage
GatetoSource Breakdown Voltage
GateSource Leakage Current
Zero Gate Voltage Drain Current
GatetoSource Cutoff Voltage
Static Drain-to-Source On-Resistance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
VGS = 0V, ID = 10mA
VDS = 0V, IG = +100mA
VGS = +16V, VDS = 0
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 15A, Note 3
VGS = 4V, ID = 15A, Note 3
Note 3. Pulse Test.
Min Typ Max Unit
60
V
+20
V
− − +10 mA
− − 10 mA
1.5
2.5 V
0.026 0.034 W
0.045 0.070 W

NTE2914
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Transfer Admittance
Input Capacitance
Output Capacitance
|yfs| VDS = 10V, ID = 15A, Note 3
11 17 S
Ciss
VGS = 0V, VDS = 10V, f = 1MHz
740
pF
Coss
380 pF
Reverse Transfer Capacitance
Crss
140 pF
TurnOn Delay Time
Rise Time
td(on)
tr
VGS = 10V, ID = 15A, RL = 2W
10 ns
160 ns
TurnOff Delay Time
td(off)
100 ns
Fall Time
tf
150 ns
BodyDrain Diode Forward Voltage
BodyDrain Diode Reverse
Recovery Time
VDF VGS = 0, IF = 25A
trr VGS = 0, IF = 25A,
diF/dt = 50Ams
0.95
40
V
ns
Note 3. Pulse Test.
D
.669
(17.0)
G
S
.394 (10.0)
.276 (7.0)
.177 (4.5)
.110 (2.8)
.126 (3.2)
Dia.
G DS
.472
(12.0)
.532
(13.5)
Min
.100 (2.54)
.098 (2.5)


Features NTE2914 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220FM Type Pac kage Features: D Low On−Resistance: RDS = 0.026W Typ. D High Speed Switchin g D 4V Gate Drive Device can be Driven from 5V Source Absolute Maximum Rating s: (TA = +255C unless otherwise specifi ed) Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate to−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Continuous Drain C urrent, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak Drain Current (Note 1), ID(pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Body Drain Diode Reverse Drain Current, IDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Avalanche Current (Note 2), I.
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