NTE2913 MOSFET Datasheet

NTE2913 Datasheet, PDF, Equivalent


Part Number

NTE2913

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2913 Datasheet


NTE2913
NTE2913
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO247 Type Package
Features:
D
D Advanced Process Technology
D Ultra Low OnResistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
G
D Fully Avalanche Rated
Description:
S
The NTE2913 Power MOSFET utilizes advanced processing techniques to achieve extremely low
onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized
device design provides the designer with an extremely efficient and reliable device for use in a wide
variety of applications.
The TO247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO220 devices. Th TO247 is similar, but superior, to the TO218 package because
of its isolated mounting hole.
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+255C . . . . . .
+1005C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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110A
. 80A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
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. . 200W
1.3W/5C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.755C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.245C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 25V, starting TJ = +255C, L = 190mH, RG = 25W, IAS = 59A
Note 3. ISD 3 59A, di/dt 3 290A/ms, VDD 3 V(BR)DSS, TJ 3 +1755C
Rev. 1013

NTE2913
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS VGS = 0V, ID = 250mA
55 − − V
V(BR)DSS
TJ
RDS(on)
Reference to +255C, ID = 1mA
VGS = 10V, ID = 59A, Note 4
0.057 V/5C
− − 0.008 W
VGS(th) VDS = VGS, ID = 250mA
2.0 4.0 V
gfs VDS = 25V, ID = 59A
42
mhos
IDSS VDS = 55V, VGS = 0V
− − 25 mA
VDS = 44V, VGS = 0V, TJ = +1505C − − 250 mA
IGSS
VGS = 20V
− − 100 nA
IGSS
VGS = 20V
− − −100 nA
Qg ID = 59A, VDS = 44V, VGS = 10V,
Qgs Note 4
− − 170 nC
− − 32 nC
Qgd − − 74 nC
td(on)
tr
VDD = 28V, ID = 59A, RG = 2.5W,
RD = 0.39W, Note 4
14
100
ns
ns
td(off)
43 ns
tf 70 ns
LD Between lead, .250in. (6.0) mm from 5.0 nH
LS package and center of die contact 13 nH
Ciss VGS = 0V, VDS = 25V, f = 1MHz
4000 pF
Coss
1300 pF
Crss 480 pF
Note 4. Pulse width 3 300ms; duty cycle 3 2%.
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS Note 5
ISM Note 1
VSD TJ = +255C, IS = 59A, VGS = 0V,
Note 4
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +255C, IF = 59A,
Qrr di/dt = 100A/ms, Note 4
Min Typ Max Unit
− − 110 A
− − 390 A
− − 1.3 V
110 170 ns
450 680 mC
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 3 300ms; duty cycle 3 2%.
Note 5. Calculated continuous current based on maximum allowable junction temperature.


Features NTE2913 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package F eatures: D D Advanced Process Technol ogy D Ultra Low On−Resistance D Dyn amic dv/dt Rating D +1755C Operating T emperature D Fast Switching G D Fully Avalanche Rated Description: S The N TE2913 Power MOSFET utilizes advanced p rocessing techniques to achieve extreme ly low on−resistance per silicon are a. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an e xtremely efficient and reliable device for use in a wide variety of applicati ons. The TO247 package is preferred fo r commercial−industrial applications where higher power levels preclude the use of TO220 devices. Th TO247 is simil ar, but superior, to the TO218 package because of its isolated mounting hole. Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . .
Keywords NTE2913, datasheet, pdf, NTE, N-Channel, MOSFET, TE2913, E2913, 2913, NTE291, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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