N-Channel MOSFET. NTE2950 Datasheet

NTE2950 MOSFET. Datasheet pdf. Equivalent

Part NTE2950
Description N-Channel MOSFET
Feature NTE2950 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−262 Type Package Features: D Low RD.
Manufacture NTE
Datasheet
Download NTE2950 Datasheet

NTE2950 MOSFET N−Channel, Enhancement Mode High Speed Switch NTE2950 Datasheet
Recommendation Recommendation Datasheet NTE2950 Datasheet





NTE2950
NTE2950
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO262 Type Package
Features:
D Low RDSON Reduces Losses
D Low Gate Charge Improves the Switching Performance
D Improved Diode Recovery Improves Switching & EMI Performance
D 30V Gate Voltage Rating Improves Robustness
D Fully Characterized Avalanche SOA
D
Applications
D Motion Control Applications
D High Efficiency Synchronous Rectification in SMPS
D Uninterruptible Power Supply
D Hard Switched and High Frequency Circuits
G
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
+D2ra5inCC(uNroretent1()V.G.S.
+100C . . . . . . . . . .
=
..
..
10V),
.....
.....
.ID. .
...
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85A
60A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A
MaximuLminePaor wDeerraDtiisnsgipFaaticotnor(T. C.
=
..
.+.2.5..C. ).,.P. D. .
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. . 350W
2.3W/C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Single Pulse Avalanche Energy (Thermally Limited, Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . 120mJ
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Lead Temperature (During soldering, 10 sec. max, 1.6mm from case), TL . . . . . . . . . . . . . . . +300C
Thermal Resistance, JunctiontoCase (Note 4, Note 5), RthJC . . . . . . . . . . . . . . . . . . . . . 0.43C/W
Thermal Resistance, JunctiontoAmbient (Note 4), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A
Note 2. Repetitive rating: pulse width limited by max. junction temperature.
Note
3.
Lniomt irteecdobmymTJemnadxe,dstfaorrtinugseTaJ b=o+v2e5thCis,
L = 0.096mH,
value.
RG
=
25W,
IAS
=
50A,
VGS
=
10V.
Device
Note 4. Thermal resistance is measured at TJ approximately +90C.
Note
5.
RcythcJleCs(efrnodmofl5if5e)
= 0.65C/W. This is the maximum measured value after 1000 temperature
to +15C and is accounted for by the physical wearout of the die attach
medium.



NTE2950
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static (TJ = +25°C unless otherwise specified)
DraintoSource Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient DV(BDRT)JDSS/
VGS = 0V,ID = 250mA
Reference
Note 2
to
+25°C,
ID
=
1mA,
150
150
V
mV/°C
Static DraintoSource OnResistance
Gate Threshold Voltage
DraintoSource Leakage Current
RDS(on)
VGS(th)
IDSS
GatetoSource Leakage Current
IGSS
Internal Gate Resistance
RG(int)
Dynamic (TJ = +25°C unless otherwise specified)
Forward Transconductance
gfs
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VGS = 10V, ID = 33A, Note 6
VDS = VGS, ID = 250mA
VVDGSS
=
=
150V,
0V
TJ = +125°C
VGS = ±20V
3.0
12 15
5.0
20
1.0
±100
0.8
VDS = 25V, ID = 50A
VIDG=S 5=01A0,VV,DNSo=te765V,
130
71 110
24
21
VVDGDS
=
=
98V,
10V,
NIDo=te560A,
RG
=
2.5W,
18
60
25
35
VGS = 0V, VDS = 50V, f = 1MHz
4460
390
82
mW
V
mA
mA
nA
W
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS Note 1
ISM Note 2
VSD INSo=te560A, VGS = 0V, TJ = +25°C,
85
330
1.3
A
A
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward TurnOn Time
trr
Qrr
IRRM
ton
IdDi/d=t 5=01A0,0VAR/m=s,1N2o8tVe, 6
89 130
300 450
6.5
Intrinsic turnon time is negligible (turnon is dominated by
LS+LD)
ns
nC
A
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A
Note 2. Repetitive rating: pulse width limited by max. junction temperature.
Note 6. Pulse width £ 400ms; duty cycle £ 2%.





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