AON7400A MOSFET Datasheet

AON7400A Datasheet, PDF, Equivalent


Part Number

AON7400A

Description

30V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AON7400A Datasheet


AON7400A
AON7400A
30V N-Channel MOSFET
General Description
Product Summary
• The AON7400A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
high side switch in SMPS and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
30V
40A
< 7.5m
< 10.5m
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
40
28
100
15
12
27
36
25
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
4.2
Max
40
75
5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 4.0: August 2014
www.aosmd.com
Page 1 of 6

AON7400A
AON7400A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.5
100
1.97
6.2
9.4
8.4
55
0.7
1
5
100
2.5
7.5
11.3
10.5
1
30
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
920 1150 1380
125 180 235
60 105 150
0.55 1.1 1.65
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16 20 24 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
7.6 9.5 11.4 nC
2 2.7 3.2 nC
Qgd Gate Drain Charge
3 5 7 nC
tD(on)
Turn-On DelayTime
6.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
2
ns
tD(off)
Turn-Off DelayTime
RGEN=3
17 ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
7 8.7 10.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11 13.5 16 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4.0: August 2014
www.aosmd.com
Page 2 of 6


Features AON7400A 30V N-Channel MOSFET General D escription Product Summary • The AO N7400A combines advanced trench MOSFET technology with a low resistance packag e to provide extremely low RDS(ON). Thi s device is suitable for use as a high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V) RDS (ON) (at VGS=10V) RDS(ON) (at VGS = 4.5 V) • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested 30V 4 0A < 7.5mΩ < 10.5mΩ DFN 3x3 EP To p View Bottom View Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parame ter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous D rain TC=25°C Current G TC=100°C Pu lsed Drain Current C ID IDM Continuou s Drain TA=25°C Current TA=70°C A valanche Current C Avalanche energy L= 0.1mH C IDSM IAS, IAR EAS, EAR TC=25 C Power Dissipation B TC=100°C PD T A=25°C Power Dissipation A TA=70°C P DSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 40 28 100 .
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