N-Channel MOSFET. AON7400A Datasheet

AON7400A MOSFET. Datasheet pdf. Equivalent

AON7400A Datasheet
Recommendation AON7400A Datasheet
Part AON7400A
Description 30V N-Channel MOSFET
Feature AON7400A; AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advance.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON7400A Datasheet





Alpha & Omega Semiconductors AON7400A
AON7400A
30V N-Channel MOSFET
General Description
Product Summary
• The AON7400A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
high side switch in SMPS and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
30V
40A
< 7.5m
< 10.5m
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
40
28
100
15
12
27
36
25
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
4.2
Max
40
75
5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 4.0: August 2014
www.aosmd.com
Page 1 of 6



Alpha & Omega Semiconductors AON7400A
AON7400A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.5
100
1.97
6.2
9.4
8.4
55
0.7
1
5
100
2.5
7.5
11.3
10.5
1
30
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
920 1150 1380
125 180 235
60 105 150
0.55 1.1 1.65
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16 20 24 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
7.6 9.5 11.4 nC
2 2.7 3.2 nC
Qgd Gate Drain Charge
3 5 7 nC
tD(on)
Turn-On DelayTime
6.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
2
ns
tD(off)
Turn-Off DelayTime
RGEN=3
17 ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
7 8.7 10.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11 13.5 16 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4.0: August 2014
www.aosmd.com
Page 2 of 6



Alpha & Omega Semiconductors AON7400A
AON7400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
100
80
60
5V
6V
4.5V
4V
40 3.5V
20
0 VGS=3V
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
100
VDS=5V
80
60
40
20
125°C
25°C
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
12
10 VGS=4.5V
8
6
VGS=10V
4
1.8
VGS=10V
1.6 ID=20A
1.4 17
VIDG=S2=054A.5V
1.2 2
10
1
2
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistan(cNeotvesE. J) unctio1n8Temperature
25
ID=20A
20
15
125°C
10
5
25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 4.0: August 2014
www.aosmd.com
Page 3 of 6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)