AON6978 N-Channel MOSFET Datasheet

AON6978 Datasheet, PDF, Equivalent


Part Number

AON6978

Description

30V Dual Asymmetric N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 10 Pages
Datasheet
Download AON6978 Datasheet


AON6978
AON6978
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET) on Low-Side
• Very Low RDS(on) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Top View
DFN5X6B
Bottom View
Top View
Q1
30V
28A
<5.7m
<9.4m
Q2
30V
36A
<3.8m
<4.9m
Bottom View
PIN1
PIN1
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±12
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
28
ID 22
IDM 112
36
28
144
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.01mH C
IDSM
IAS
EAS
20
16
40
8
28
22
60
18
VDS Spike
100ns
VSPIKE
36
36
TC=25°C
Power Dissipation B TC=100°C
PD
31
12
33
13
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.6
2.3
4.3
2.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
3
Max Q1
35
67
4
Max Q2
29
60
3.8
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: June 2013
www.aosmd.com
Page 1 of 10

AON6978
AON6978
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
30
1.4
V
1
µA
5
±100 nA
1.8 2.2
V
4.7 5.7
m
6.3 7.6
7.5 9.4 m
62 S
0.7 1
V
28 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1010
474
50
0.7 1.6 2.4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14.4 25 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
6.8 15 nC
2.9 nC
Qgd Gate Drain Charge
2.5 nC
tD(on)
Turn-On DelayTime
4.8 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
3.2
ns
tD(off)
Turn-Off DelayTime
RGEN=3
21 ns
tf Turn-Off Fall Time
3.8 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
14 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
24 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2013
www.aosmd.com
Page 2 of 10


Features AON6978 30V Dual Asymmetric N-Channel Al phaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) techno logy • Integrated Schottky Diode (SRF ET) on Low-Side • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen -Free Compliant Application • DC/DC C onverters in Computing, Servers, and PO L • Isolated DC/DC Converters in Tele com and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) R DS(ON) (at VGS=4.5V) 100% UIS Tested 10 0% Rg Tested Top View DFN5X6B Bottom View Top View Q1 30V 28A <5.7mΩ <9. 4mΩ Q2 30V 36A <3.8mΩ <4.9mΩ Bo ttom View PIN1 PIN1 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky D iode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Sym bol Max Q1 Max Q2 Drain-Source Volta ge VDS 30 Gate-Source Voltage VGS ± 20 ±12 Continuous Drain TC=25°C Cu rrent G TC=100°C Pulsed Drain Curren t C 28 ID 22 IDM 112 36 28 144 Continuous Drain TA=25°C Current TA=70°C Avalanche Curr.
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