AON6980 N-Channel MOSFET Datasheet

AON6980 Datasheet, PDF, Equivalent


Part Number

AON6980

Description

30V Dual Asymmetric N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 10 Pages
Datasheet
Download AON6980 Datasheet


AON6980
AON6980
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Applications
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Top View
DFN5X6B
Bottom View
100% UIS Tested
100% Rg Tested
Top View
Q1
30V
28A
< 6.8m
< 10.3m
Q2
30V
36A
< 3.8m
< 4.9m
Bottom View
PIN1
PIN1
Orderable Part Number
AON6980
Package Type
DFN 5x6B
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
VGS
ID
IDM
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
C
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
30
±20
28
22
111
18
14
51
13
36
23.5
9.4
3.5
2.2
-55 to 150
Max Q2
30
±12
36
28
144
27
21
60
18
36
32
13
4.1
2.6
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
55
4.3
Typ Q2
25
50
3
Max Q1
35
66
5.3
Max Q2
30
60
3.8
Units
°C/W
°C/W
°C/W
Rev.1.0: January 2014
www.aosmd.com
Page 1 of 10

AON6980
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250uA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Min
30
1.4
0.1
Typ
1.8
5.6
8
8.2
71
0.7
1095
270
28
0.5
14.6
6.4
3.4
2
8
15.2
17.2
2.4
11
24
Max Units
1
5
±100
2.2
6.8
9.6
10.3
1
28
V
µA
nA
V
m
m
S
V
A
pF
pF
pF
1
22 nC
10 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2014
www.aosmd.com
Page 2 of 10


Features AON6980 30V Dual Asymmetric N-Channel Al phaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology Low RDS(ON) • Low Gate Charge • H igh Current Capability • RoHS and Hal ogen-Free Compliant Product Summary VD S ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • DC/DC Converters in Computing, Servers , and POL • Isolated DC/DC Converters in Telecom and Industrial Top View D FN5X6B Bottom View 100% UIS Tested 100 % Rg Tested Top View Q1 30V 28A < 6.8m Ω < 10.3mΩ Q2 30V 36A < 3.8mΩ < 4.9mΩ Bottom View PIN1 PIN1 Ordera ble Part Number AON6980 Package Type D FN 5x6B Q2: SRFETTM Soft Recovery MOSF ET: Integrated Schottky Diode Form Tape & Reel Minimum Order Quantity 3000 A bsolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Dr ain-Source Voltage VDS Gate-Source Vo ltage Continuous Drain TC=25°C Curre nt G TC=100°C Pulsed Drain Current C VGS ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche en.
Keywords AON6980, datasheet, pdf, Alpha & Omega Semiconductors, 30V, Dual, Asymmetric, N-Channel, MOSFET, ON6980, N6980, 6980, AON698, AON69, AON6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)