NPN Transistor. 2N3019 Datasheet

2N3019 Transistor. Datasheet pdf. Equivalent

Part 2N3019
Description NPN Transistor
Feature 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL .
Manufacture Central Semiconductor
Datasheet
Download 2N3019 Datasheet



2N3019
2N3019
2N3020
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3019, 2N3020
types are NPN silicon transistors designed for general
purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
140
80
7.0
1.0
0.8
5.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3019
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=90V
- 10
ICBO
VCB=90V, TA=150°C
- 10
IEBO
VEB=5.0V
- 10
BVCBO
IC=100μA
140 -
BVCEO
IC=30mA
80 -
BVEBO
IE=100μA
7.0 -
VCE(SAT) IC=150mA, IB=15mA
- 0.2
VCE(SAT) IC=500mA, IB=50mA
- 0.5
VBE(SAT) IC=150mA, IB=15mA
- 1.1
hFE VCE=10V, IC=100μA
50 -
hFE VCE=10V, IC=10mA
90 -
hFE VCE=10V, IC=150mA
100 300
hFE VCE=10V, IC=150mA, TA=-55°C 40 -
hFE VCE=10V, IC=500mA
50 -
hFE VCE=10V, IC=1.0A
15 -
fT VCE=10V, IC=50mA, f=20MHz 100 -
Cob VCB=10V, IE=0, f=1.0MHz
- 12
Cib VEB=0.5V, IC=0, f=1.0MHz
- 60
rb’Cc
VCE=10V, IC=10mA, f=4.0MHz
- 400
NF VCE=10V, IC=100μA, f=1.0kHz,
RS=1.0kΩ
- 4.0
2N3020
MIN MAX
- 10
- 10
- 10
140 -
80 -
7.0 -
- 0.2
- 0.5
- 1.1
30 100
40 120
40 120
--
30 100
15 -
100 -
- 12
- 60
- 400
--
UNITS
V
V
V
A
W
W
°C
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
ps
dB
R1 (11-June 2012)



2N3019
2N3019
2N3020
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (11-June 2012)





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