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2N3019 Datasheet, Equivalent, NPN Transistor.NPN Transistor NPN Transistor |
| Part | 2N3019 |
|---|---|
| Description | NPN Transistor |
| Feature | 2N3019 2N3020
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESC RIPTION: The CENTRAL SEMICONDUCTOR 2N30 19, 2N3020 types are NPN silicon transi stors designed for general purpose ampl ifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T A=25°C) Collector-Base Voltage Collect or-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dis sipation Power Dissipation (TC=25°C) O perating and Storage Junction Temperatu re SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 140 80 7. 0 1. 0 0. 8 5. 0 -65 to +20 0 ELECTRICAL CHARACTERISTICS: (TA=25° C unless otherwis . |
| Manufacture | Central Semiconductor |
| Datasheet |
| Part | 2N3019 |
|---|---|
| Description | NPN Transistor |
| Feature | 2N3019 2N3020
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESC RIPTION: The CENTRAL SEMICONDUCTOR 2N30 19, 2N3020 types are NPN silicon transi stors designed for general purpose ampl ifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T A=25°C) Collector-Base Voltage Collect or-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dis sipation Power Dissipation (TC=25°C) O perating and Storage Junction Temperatu re SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 140 80 7. 0 1. 0 0. 8 5. 0 -65 to +20 0 ELECTRICAL CHARACTERISTICS: (TA=25° C unless otherwis . |
| Manufacture | Central Semiconductor |
| Datasheet |
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