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NPN Transistor. 2N3019 Datasheet

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NPN Transistor. 2N3019 Datasheet






2N3019 Transistor. Datasheet pdf. Equivalent




2N3019 Transistor. Datasheet pdf. Equivalent





Part

2N3019

Description

NPN Transistor



Feature


2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESC RIPTION: The CENTRAL SEMICONDUCTOR 2N30 19, 2N3020 types are NPN silicon transi stors designed for general purpose ampl ifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T A=25°C) Collector-Base Voltage Collect or-Emitter Voltage Emitter-Base Voltage Continuous Collect.
Manufacture

Central Semiconductor

Datasheet
Download 2N3019 Datasheet


Central Semiconductor 2N3019

2N3019; or Current Power Dissipation Power Dissi pation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 140 80 7.0 1.0 0.8 5.0 -65 to +200 ELECTRICAL CHARAC TERISTICS: (TA=25°C unless otherwise n oted) 2N3019 SYMBOL TEST CONDITIONS M IN MAX ICBO VCB=90V - 10 ICBO VCB= 90V, TA=150°C - 10 IEBO VEB=5.0V - 10 BVCBO IC=100μA .


Central Semiconductor 2N3019

140 - BVCEO IC=30mA 80 - BVEBO IE= 100μA 7.0 - VCE(SAT) IC=150mA, IB=15 mA - 0.2 VCE(SAT) IC=500mA, IB=50mA - 0.5 VBE(SAT) IC=150mA, IB=15mA - 1. 1 hFE VCE=10V, IC=100μA 50 - hFE VC E=10V, IC=10mA 90 - hFE VCE=10V, IC=1 50mA 100 300 hFE VCE=10V, IC=150mA, T A=-55°C 40 - hFE VCE=10V, IC=500mA 5 0 - hFE VCE=10V, IC=1.0A 15 - fT VCE =10V, IC=50mA, f=20MH.


Central Semiconductor 2N3019

z 100 - Cob VCB=10V, IE=0, f=1.0MHz - 12 Cib VEB=0.5V, IC=0, f=1.0MHz - 60 rb’Cc VCE=10V, IC=10mA, f=4.0MHz - 400 NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ - 4.0 2N3020 MIN MAX - 10 - 10 - 10 140 80 7.0 - 0.2 - 0.5 - 1.1 30 100 40 120 40 120 -30 100 15 100 - 1 2 - 60 - 400 -- UNITS V V V A W W °C UNITS nA μA nA V V V V V V MHz pF pF p s dB R1 (11-June 2012) .

Part

2N3019

Description

NPN Transistor



Feature


2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESC RIPTION: The CENTRAL SEMICONDUCTOR 2N30 19, 2N3020 types are NPN silicon transi stors designed for general purpose ampl ifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T A=25°C) Collector-Base Voltage Collect or-Emitter Voltage Emitter-Base Voltage Continuous Collect.
Manufacture

Central Semiconductor

Datasheet
Download 2N3019 Datasheet




 2N3019
2N3019
2N3020
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3019, 2N3020
types are NPN silicon transistors designed for general
purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
140
80
7.0
1.0
0.8
5.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3019
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=90V
- 10
ICBO
VCB=90V, TA=150°C
- 10
IEBO
VEB=5.0V
- 10
BVCBO
IC=100μA
140 -
BVCEO
IC=30mA
80 -
BVEBO
IE=100μA
7.0 -
VCE(SAT) IC=150mA, IB=15mA
- 0.2
VCE(SAT) IC=500mA, IB=50mA
- 0.5
VBE(SAT) IC=150mA, IB=15mA
- 1.1
hFE VCE=10V, IC=100μA
50 -
hFE VCE=10V, IC=10mA
90 -
hFE VCE=10V, IC=150mA
100 300
hFE VCE=10V, IC=150mA, TA=-55°C 40 -
hFE VCE=10V, IC=500mA
50 -
hFE VCE=10V, IC=1.0A
15 -
fT VCE=10V, IC=50mA, f=20MHz 100 -
Cob VCB=10V, IE=0, f=1.0MHz
- 12
Cib VEB=0.5V, IC=0, f=1.0MHz
- 60
rb’Cc
VCE=10V, IC=10mA, f=4.0MHz
- 400
NF VCE=10V, IC=100μA, f=1.0kHz,
RS=1.0kΩ
- 4.0
2N3020
MIN MAX
- 10
- 10
- 10
140 -
80 -
7.0 -
- 0.2
- 0.5
- 1.1
30 100
40 120
40 120
--
30 100
15 -
100 -
- 12
- 60
- 400
--
UNITS
V
V
V
A
W
W
°C
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
ps
dB
R1 (11-June 2012)




 2N3019
2N3019
2N3020
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (11-June 2012)







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