NPN Transistor. 2N3019 Datasheet

2N3019 Transistor. Datasheet pdf. Equivalent

Part 2N3019
Description Silicon NPN Transistor
Feature 2N3019 Silicon NPN Transistor Audio Output, Video, Driver TO−5 Type Package Absolute Maximum Rating.
Manufacture NTE
Datasheet
Download 2N3019 Datasheet



2N3019
2N3019
Silicon NPN Transistor
Audio Output, Video, Driver
TO5 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total
Device Dissipation,
TTAC
=
=
+25C
+25C
.
.
.
.
.
.
.
.
.
.
.P.D.
...
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
800mW
. . . 5W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W
Note 1. Stresses exceeding Absolute Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
EmitterBase Cutoff Current
CollectorEmitter Cutoff Current
CollectorBase Cutoff Current
ON Characteristics (Note 2)
V(BR)CEO
IEBO
ICEO
ICBO
IC = 30mA
VEB = 5V
VEB = 7V
VCE = 90V
VCE = 140V
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
IC = 0.1mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 1.0A, VCE = 10V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Min Typ Max Unit
80 − − V
− − 10 nA
− − 10 A
− − 10 nA
− − 10 A
50 300
90
100 300
50 300
15
− − 0.2 V
− − 0.5 V
− − 1.1 V



2N3019
Electrical Characteristics (Cont’d): TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
SmallSignal Characteristics
Magnitude of Small-Signal Current-Gain
SmallSignal Current Gain
Output Capacitance
Input Capacitance
Noise Figure
|hfe|
hfe
Cobo
Cibo
NF
IC = 50mA, VCE = 10V, f = 20MHz
IC = 1mA, VCE = 5V, f = 1kHz
VCB = 10V, IE = 0, 100kHz f 1MHz
VBE = 500mV, IC = 0,100kHz f 1MHz
IPCB=W1=0020A0,HVzCE = 10V, Rg = 1k,
5.0
80
20
400
12 pF
60 pF
4 dB
CollectorBase Time Constant
Switching Characteristics
rbCc IC = 10mA, VCB = 10V, f = 79.8MHz
400 ps
Pulse Response
ton + toff
− − 30 ns
.250
(6.35)
Max
.500
(12.7)
Min
.352 (8.95) Dia Max
.320 (8.13) Dia Max
Emitter
45
.019 (0.5)
Base
Collector/Case
.031 (.793)





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)