NPN Transistor. 2N3704 Datasheet

2N3704 Transistor. Datasheet pdf. Equivalent

Part 2N3704
Description Silicon NPN Transistor
Feature 2N3704 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package Applications: D Medium P.
Manufacture NTE
Datasheet
Download 2N3704 Datasheet



2N3704
2N3704
Silicon NPN Transistor
General Purpose Amplifier
TO92 Type Package
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D HiFi Drivers
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
CollectorEmitter Breakdown
Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CBO IC = 100A, IE = 0
V(BR)EBO IE = 100A, IC = 0
ICBO VCB = 20V, IE = 0
IEBO VBE = 3V, IC = 0
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%
Min Typ Max Unit
30 − − V
50 − − V
5.0 − − V
− − 100 nA
− − 100 nA



2N3704
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
BaseEmitter ON Voltage
hFE VCE = 2V, IC = 50mA, Note 3 100 300
VBE(on) IC = 100mA, VCE = 2V,
Note 3
0.5 1.0 V
CollectorEmitter Saturation Voltage VCE(sat) IC = 100mA, IB = 5mA,
Note 3
− − 0.6 V
Current GainBandwidth Product
CollectorBase Capacitance
fT IC = 50mA, VCE = 2V
100
Ccb VCB = 10V, IE = 0, f = 1MHz
MHz
12 pF
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
ECB
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max





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