NPN Transistor. 2N3054 Datasheet

2N3054 Transistor. Datasheet pdf. Equivalent

Part 2N3054
Description Silicon NPN Transistor
Feature 2N3054 Silicon NPN Transistors Medium Power General Purpose Switch TO66 Type Package Description: T.
Manufacture NTE
Datasheet
Download 2N3054 Datasheet




2N3054
2N3054
Silicon NPN Transistors
Medium Power General Purpose Switch
TO66 Type Package
Description:
The 2N3054 is a silicon NPN transistor in a TO66 type package designed for general purpose switching
and amplifier applications
Features:
D Excellent Safe Operating Area
D DC Current Gain Specified to 3.0 Amps
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V
CollectorEmitter Voltage (RBE = 1005 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Derate above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 655 to +2005C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 655 to +2005C
Thermal Resistance, Junction to Case, R3 JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1
VCER(sus) IC = 100mA, RBE = 1005 , Note 1
Collector Cutoff Current
ICEO VCE = 30V, IB = 0
ICEX VCE = 90V, VBE(off) = 1.5V
VCE = 90V, VBE(off) = 1.5V, TC = +1505C
Emitter Cutoff Current
IEBO VEB = 7V, IC = 0
Note 1. Pulse Test: Pulse Width 3 300 s, Duty Cycle 3 2%.
Min Typ Max Unit
55 − − V
60 − − V
−−5
A
− − 1.0 mA
− − 6.0 mA
− − 1.0 mA



2N3054
Electrical Characteristics (Cont’d): (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
IC = 0.5A, VCE = 4V
IC = 3.0A, VCE = 4V
IC = 500mA, IB = 50mA
IC = 3.0A, IB = 1.0A
IC = 500mA, VCE = 4V
25 150
5.0 − −
− − 1.0 V
− − 6.0 V
− − 1.7 V
Current Gain Bandwidth Product
SmallSignal Current Gain
CommonEmitter Cutoff frequency
fT
IC = 200mA, VCE = 10V
hfe IC = 100mA, VCE = 4V, f = 1kHz
fhfe IC = 100mA, VCE = 4V
3.0 − − MHz
25 180
30 − −
Note 1. Pulse Test: Pulse Width 3 300 s, Duty Cycle 3 2%.
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.360
(9.14)
Min
Base
.200
(5.08)
Collector/Case
Emitter







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