N-Channel FET. 2N7002KW Datasheet

2N7002KW FET. Datasheet pdf. Equivalent

Part 2N7002KW
Description N-Channel FET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download 2N7002KW Datasheet




2N7002KW
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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2N7002KW
Features
High density cell design for Low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Low Input/Output Leakage
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: 72K
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 625K/W Junction To Ambient
Parameter
Symbol Value Unit
Drain-Source-Voltage
Gate-Source-Voltage
Drain Current
Total Power Dissipation
VDSS
VGS
ID
PD
60
V
±0
V
340 mA
200
mW
Equivalent circuit
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
A
D
D
BC
G
S
F
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.083
.096
2.10
2.45
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.006
.016
.15
.40
Suggested Solder
Pad Layout
0.70
NOTE
0.90
1.90
0.65
0.65
Revision: E
www.mccsemi.com
1of 3
2017/10/30



2N7002KW
2N7002KW
MCC
R
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ
Static Characteristics
Drain-Source Breakdown Voltage
VDS
VGS = 0V, ID =250µA
60
Gate Threshold Voltage*
VGS(th) VDS =VGS, ID =1mA
1
Zero Gate Voltage Drain Current
IDSS
VDS =48V,VGS = 0V
Gate –Source leakage current
IGSS
VGS =±20V, VDS = 0V
Drain-Source On-Resistance*
RDS(on)
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
Diode Forward Voltage
VSD
VGS=0V, IS=300mA
Recovered charge
Qr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
30
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Ciss
Coss
VDS =10V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Crss
td(on)
td(off)
VGS=10V,VDD=50V,RG=50,
RGS=50, RL=250
Reverse recovery Time
trr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
30
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain)
Notes:
*Pulse Test : Pulse Width 300µs, Duty Cycle 2%.
**These parameters have no way to verify.
±21.5
Max Units
V
2.5
V
1
µA
±10 µA
5.3
5
1.5
V
nC
40 pF
30
pF
10
pF
10
ns
15
ns
ns
±30
V
Revision: E
www.mccsemi.com
2 of 3
2017/10/30







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