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2SA1773

Part Number	2SA1773
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage: V(BR)CEO >-400V @IC=-1mA ·Large current capacity ...
Datasheet	2SA1773 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage: V(BR)CEO >-400V @IC=-1mA ·Large current capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1773 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silic...

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