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2SD669

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIM...

INCHANGE

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