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BU326A
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
INCHANGE Semiconductor BU326A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in operating in color TV re...
INCHANGE
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