DatasheetsPDF.com
TTD1410
NPN Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Igniter applica...
INCHANGE
Download TTD1410 Datasheet
Similar Datasheet
TTD1409B
NPN Transistor
- INCHANGE
TTD1410
NPN Transistor
- INCHANGE
TTD1415
NPN Transistor
- INCHANGE
TTD1415B
Silicon NPN Transistor
- Toshiba
TTD1415B
Silicon NPN Power Transistor
- Inchange
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)