isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Included Avalanche Diode-
: VZ= 60±15V ·High DC Current Gain
: hFE= 2000~20000@ IC= 0.5A, VCE= 5V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power regulator for line operated TV applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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