isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
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