isc Silicon NPN Power Transistor
2SD612
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 25V(Min.) ·High Collector Dissipation ·Wide Area of Safe Operation ·Complement to Type 2SB632 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLU...