isc Silicon NPN Power Transistor
2SD613
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 85V(Min) ·Complement to Type 2SB633 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency 25~35 watts output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
...
