isc Silicon NPN Power Transistors
2SD673
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High Power Dissipation-
: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB653 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMU...
