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2SD1267
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
2SD1267 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification....
INCHANGE
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