DatasheetsPDF.com
2SD1889
NPN Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIM...
INCHANGE
Download 2SD1889 Datasheet
Similar Datasheet
2SD180
Silicon NPN Power Transistor
- Inchange Semiconductor
2SD1800
NPN Epitaxial Silicon Transistor
- Sanyo Semicon Device
2SD1801
Bipolar Transistor
- ON Semiconductor
2SD1801
Silicon NPN Power Transistor
- Inchange Semiconductor
2SD1801
PNP/NPN Epitaxial Planar Silicon Transistors
- Sanyo Semicon Device
2SD1802
Silicon NPN Power Transistor
- Inchange Semiconductor
2SD1802
NPN Transistor
- TRANSYS
2SD1802
NPN Epitaxial Planar Silicon Transistors
- GME
2SD1802
Bipolar Transistor
- ON Semiconductor
2SD1802
PNP/NPN Epitaxial Planar Silicon Transistors
- Sanyo Semicon Device
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
