DatasheetsPDF.com

2SD1893

Part Number	2SD1893
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= 5A ·Low-Co...
Datasheet	2SD1893 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= 5A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.
5V(Max.
)@IC= 5A ·Complement to Type 2SB1253 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1...

Similar Datasheet

2SD180 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1800 NPN Epitaxial Silicon Transistor - Sanyo Semicon Device
2SD1801 Bipolar Transistor - ON Semiconductor
2SD1801 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD1802 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1802 NPN Transistor - TRANSYS
2SD1802 NPN Epitaxial Planar Silicon Transistors - GME
2SD1802 Bipolar Transistor - ON Semiconductor
2SD1802 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)