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2SD2257
NPN Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Complement to Type 2SB1495 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·Hammer drive,...
INCHANGE
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