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BD246

PNP Transistor

Description

isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C ·Complement to Type BD245/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use...

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