NPN Transistor. BUX83 Datasheet

BUX83 Transistor. Datasheet pdf. Equivalent


Part BUX83
Description NPN Transistor
Feature isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400.
Manufacture INCHANGE
Datasheet
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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Em BUX83 Datasheet
Recommendation Recommendation Datasheet BUX83 Datasheet




BUX83
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)-BUX82
= 450V(Min)-BUX83
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
BUX82
800
VCES
Collector-Emitter Voltage
V
BUX83
1000
BUX82
400
VCEO
Collector-Emitter Voltage
V
BUX83
450
VCER
Collector-Emitter Voltage
RBE= 50Ω
BUX82
BUX83
500
500
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
3
A
PC
Collector Power Dissipation @TC=25
75
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.65 /W
BUX82/83
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BUX83
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BUX82
BUX83
BUX83
VCE(sat)-1
Collector-Emitter
Saturation Voltage
BUX82
BUX83
VCE(sat)-2
Collector-Emitter
Saturation Voltage
BUX82
BUX83
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector
Cutoff Current
BUX82
BUX83
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
CONDITIONS
IC= 50mA ; IB= 0
IC= 4A; IB= 1.25A
IC= 2.5A; IB= 0.5A
IC= 4A; IB= 1.25A
IC= 2.5A; IB= 0.5A
VCB=800V; IE= 0,
VCB=800V; IE= 0,TC=125
VCB=1000V; IE= 0,
VCB=1000V; IE= 0,,TC=125
VEB= 10V; IC=0
IC= 1.2A ; VCE= 5V
BUX82/83
MIN TYP. MAX UNIT
400
450
V
500
3.0
V
1.6
1.5
V
1.4
1.6
V
1.4
V
1.0
2.0
mA
1.0
2.0
10 mA
30
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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