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2SD962

Part Number	2SD962
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·High DC Current Gain ·High Reliab...
Features	ess otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 V(...
Published	Sep 29, 2020
Datasheet	2SD962 PDF File

Features

ess otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 VCE(sat)-1 Colle...

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