N-Channel MOSFET. 2N40 Datasheet

2N40 MOSFET. Datasheet pdf. Equivalent


Part 2N40
Description N-Channel MOSFET
Feature IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.25 A, 350-400V Description These devices are.
Manufacture ART CHIP
Datasheet
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2N40
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high speed applications,
such as switching power supplies, converters, AC and DC
motor controls, relay and solenoid driver and high energy
pulse circuits.
z Low RDS(on)
z VGS Rated at ±20V
z Silicon Gate for Fast Switching Speeds
z IDSS, VDS(on), Specified at Elevated Temperature
z Rugged
z Low Drive Requirements
z Ease of Paralleling
TO-220AB
IRF711
IRF712
IRF713
MTP2N35
MTP2N40
Maximum Ratings
Symbol
VDSS
VDGR
VGS
TJ,Tsgt
TL
Characteristic
Drain to Source Voltage1
Drain to Gate Voltage1
RGS=20k
Gate to Source Voltage
Operating Junction and Storage
Temperatures
Maximum Lead Temperature for
Soldering Purposes,
1/8” From Case for 5 s
Rating
IRF710/712
MTP2N40
400
400
±20
-55 to +150
275
Maximum On-State Characteristics
RDS(on)
ID
Static Drain-to-Source
On Resistance
Drain Current
Continuous at Tc=25¥
Continuous at Tc=100¥
Pulsed
IRF710-711
3.6
1.5
1.0
6.0
Maximum On-State Characteristics
R ӨJC
Thermal Resistance
6.4
Junction to Case
R ӨJA
Thermal Resistance,
80
Junction to Ambient
PD
Total Power Dissipation
20
at Tc=25¥
Notes
For information concerning connection diagram and package outline, refer to
Section 7.
Rating
IRF711/713
MTP2N35
350
350
±20
-55 to +150
275
IRF712-713
5.0
1.4
0.9
5.0
6.4
80
20
Unit
V
V
V
¥
¥
NTP2N35/40 Unit
5.0
A
1.3
0.8
5.0
2.5
¥/W
80
¥/W
50
W
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2N40
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Electrical Characteristics (Tc=25¥ unless otherwise noted)
Symbol
Characteristic
Min
Off Characteristics
V(BR)DSS
Drain Source Breakdown Voltage1
IRF710/712/MTP2N40
400
IRF711/713/MTP2N35
350
IDSS
Zero Gate Voltage Drain Current
Max
250
1000
Unit
V
µA
µA
IGSS
Gate-Body Leakage Current
±500
µA
On Characteristics
VGS(th)
Gate Threshold Voltage
IRF710-713
V
2.0
4.0
MTP2N35/2N40
2.0
4.5
RDS(on)
Static Drain-Source On-Resistance2
IRF710/711
3.6
IRF712/713/MTP2N35/40
5.0
VDS(on)
Drain-Source On-Voltage2
MTP2N35/2N40
13
V
10
V
gfs
Forward Transconductance
0.5
Dynamic Characteristics
Ciss
Input Capacitance
200
Coss
Output Capacitance
50
Crss
Reverse Transfer Capacitance
15
Switching Characteristics (Tc=25¥, Figure 11,12)3
td(on)
Turn-On Delay Time
10
tr
Rise Time
20
td(off)
Turn-Off Delay Time
10
tf
Fall Time
15
Qg
Total Gate Charge
7.5
S( )
pF
pF
pF
ns
ns
ns
ns
nC
Electrical Characteristics (Cont.) (Tc=25¥ unless otherwise noted)
Symbol
Characteristic
Typ
Max
Unit
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF710/711
1.6
V
IRF712/713
1.5
V
trr
Reverse Recovery Time
380
ns
Notes
1. TJ=+25¥ to +150¥
2. Pulse test: Pulse width 80µs, Duty cycle 1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Test Conditions
VGS=0V, ID=250µA
VDS=Rated VDSS, VGS=0V
VDS=0.8 x Rated VDSS,
VGS=0V, Tc=125¥
VGS=±20V, VDS=0V
ID=250µA, VDS=VGS
ID=1mA, VDS=VGS
VGS=10V, ID=0.8A
VGS=10V, ID=2.0A
VGS=10V, ID=1.0A,
TC=100¥
VDS=10V, ID=0.8A
VDS=25V, VGS=0V
f=1.0MHz
VDD=200V, ID=0.8A
VGS=10V, RGEN=50
RGS=50
VGS=10V, ID=2.0A
VDD=200V
Test Conditions
IS=1.5A; VGS=0V
IS=1.3A; VGS=0V
Is=1.5A; dls/dt=25A/µS
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