N-Channel MOSFET. 2N60 Datasheet

2N60 MOSFET. Datasheet pdf. Equivalent


PINGWEI 2N60
2N60(F,B,H,G,D)
2A mps,600 Volts N-CHANNEL MOSFET
FEATURE
2A,600V,RDS(ON)=4Ω@VGS=10V/1A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
2N60
ITO-220AB
2N60F
TO-262
2N60H
TO-263
2N60B
TO-252
2N60G
TO-251
2N60D
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
2N60
600
±30
2
8
120
2.0
5.4
4.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25
Symbol
RthJC
PD
ITO-220
4
32
TO-220
2
62
TO-262
TO-263
2
62
TO-251
TO-252
6
21
Units
/W
W
- 页码 -
Rev. 14-1
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2N60 Datasheet
Recommendation 2N60 Datasheet
Part 2N60
Description N-Channel MOSFET
Feature 2N60; 2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low ga.
Manufacture PINGWEI
Datasheet
Download 2N60 Datasheet




PINGWEI 2N60
Electrical Characteristics (TC=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃,
/ΔTJ
ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
Gate-Body Leakage Current, Forward
IGSSF
VGS=30V, VDS=0V
Gate-Body Leakage Current, Reverse
IGSSR
VGS=-30V, VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V, ID=1A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V, VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=300V, ID=2A,
Turn-On Rise Time
tr
RG=25Ω (Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=480V, ID=2A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=2A, VGS=0V
Reverse Recovery Time
trr
VGS=0V, IS=2A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/μs, (Note4)
Notes
1. Repetitive Rating: pulse width limited by maximum junction temperature
2. VDD=50V, starling, L=58mH, RG=25Ω, IAS=2A , TJ=25
3. ISDID, dI/dt=200A/μs, VDDBVDSS, starting TJ=25.
4. Pulse width≤300μs; duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
600
V
0.5
V/
1
μA
100
nA
-100 nA
2
4
V
4
Ω
180 235
pF
20
25
pF
4.3 5.6
pF
9
28
ns
25
60
ns
24
58
ns
28
66
ns
8.5
12
nC
1.3
nC
4.1
nC
2
A
8
A
1.4
V
230
ns
1
μC
- 页码 -
Rev. 14-1
http:// www.perfectway.cn







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