CMPA601C025D
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
Description
Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium a...
