2SJ539
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-657A (Z) 2nd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.16 Ω typ. Low drive current 4 V gete drive devices High speed switching
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain (Flange) 3. Source
2SJ539
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source vol...
