2SJ575
Silicon P Channel MOS FET High Speed Switching
ADE-208-740B (Z) 3rd.Edition. June 1999 Features
Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) 4 V gate drive device. Small package (MPAK)
Outline
MPAK
3 1
D 3
2
2 G
1. Source 2. Gate 3. Drain
S 1
2SJ575
Absolute Maximum Ratings ...
