2SJ587
Silicon P Channel MOS FET High Speed Switching
ADE-208-801 (Z) 1st.Edition. June 1999 Features
Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) 2.5 V gate drive device. Small package (SMPAK)
Outline
SMPAK
3 1 2 D 3
2 G
1. Source 2. Gate 3. Drain
S 1
2SJ587
Absolute Maximum Ratings ...
