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2SK2685

GaAs HEMT

Description

2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz) High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) High voltage. VDS = 6 or more voltage. Small package. (CMPAK-4) Outline CMPAK–4 2 3 4 1 1. Source 2. Gate 3. Source 4. Drain...

Hitachi Semiconductor

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