Part Number |
2SK2685 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
GaAs HEMT |
Datasheet |
2SK2685 Datasheet (PDF) |
2SK2685
GaAs HEMT
ADE-208-400 1st. Edition
Application
UHF low noise amplifier
Features
• Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz) • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage. • Small package. (CMPAK-4)
Outline
CMPAK–4
2 3 4 1 1. Source 2. Gate 3. Source 4. Drain
2SK2685
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 –6 –7 20 100 125 –55 to +125 Unit V V V mA mW °C °C
Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Gate to source leak current Gate to source cutoff voltage Drain current Forward transfer admittance Associated gain Associated gain Associated g.