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Part Number 2SK2685
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description GaAs HEMT
Datasheet 2SK2685 Datasheet2SK2685 Datasheet (PDF)

  2SK2685   2SK2685
2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz) • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage. • Small package. (CMPAK-4) Outline CMPAK–4 2 3 4 1 1. Source 2. Gate 3. Source 4. Drain 2SK2685 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 –6 –7 20 100 125 –55 to +125 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Gate to source leak current Gate to source cutoff voltage Drain current Forward transfer admittance Associated gain Associated gain Associated g.



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