2SK3348
Silicon N Channel MOS FET High Speed Switching
ADE-208-772 A (Z) 2nd.Edition. June 1999 Features
Low on-resistance R DS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 Ω typ. (VGS = 2.5 V , I D = 50 mA) 2.5 V gate drive device. Small package (CMPAK)
Outline
CMPAK
3
1
D
2
G
1. Source 2. Gate 3. Drain
S
2SK3348
Absolute Maximum Ratings (T...
