PowerTrenchTM MOSFET. FDN335N Datasheet

FDN335N Datasheet PDF, Equivalent


Part Number

FDN335N

Description

N-Channel 2.5V Specified PowerTrenchTM MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDN335N Datasheet PDF


FDN335N Datasheet
April 1999
FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Load switch
Features
1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V
RDS(ON) = 0.100 @ VGS = 2.5 V.
Low gate charge (3.5nC typical).
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
DD
SuperSOTTM-3
G
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
335
FDN335N
7’’
©1999 Fairchild Semiconductor Corporation
GS
Ratings
20
±8
1.7
8
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDN335N Rev. C

FDN335N Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(ON)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VGS = 0 V, ID = 250 µA
20
ID = 250 µA,Referenced to 25°C
14
V
mV/°C
VDS = 16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
1 µA
100 nA
VGS = -8 V, VDS = 0 V
-100 nA
VDS = VGS, ID = 250 µA
0.4 0.9
ID = 250 µA,Referenced to 25°C
-3
1.5 V
mV/°C
VGS = 4.5 V, ID = 1.7 A
0.055 0.070
VGS = 4.5 V, ID = 1.7 A,TJ = 125°C
0.079 0.120
VGS = 2.5 V, ID = 1.5 A
0.078 0.100
VGS = 4.5 V, VDS = 5 V
8
VDS = 5 V, ID = 1.5 A
7
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
310 pF
80 pF
40 pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 10 V, ID = 1.7 A,
VGS = 4.5 V,
5
8.5
11
3
3.5
0.55
0.95
15
17
20
10
5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 0.42 A (Note 2)
Voltage
0.42
0.7 1.2
A
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
b) 270°C/W when mounted
on a minimum pad.
FDN335N Rev. C


Features Datasheet pdf FDN335N April 1999 FDN335N N-Channel 2 .5V Specified PowerTrenchTM MOSFET Gene ral Description This N-Channel 2.5V spe cified MOSFET is produced using Fairchi ld Semiconductor's advanced PowerTrench process that has been especially tailo red to minimize the on-state resistance and yet maintain low gate charge for s uperior switching performance. Feature s • • • 1.7 A, 20 V. RDS(ON) = 0. 07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench tech nology for extremely low RDS(ON). High power and current handling capability. Applications • DC/DC converter • L oad switch • D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolute Maximum Ratings Symbol V DSS VGSS ID PD TJ, Tstg Drain-Source Vo ltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Rati ngs 20 (Note 1a) Units V V A W °C ± 8 1.7 8 0.5 0.46 -55 to +150 Power Dis sipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction.
Keywords FDN335N, datasheet, pdf, Fairchild Semiconductor, N-Channel, 2.5V, Specified, PowerTrenchTM, MOSFET, DN335N, N335N, 335N, FDN335, FDN33, FDN3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)