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Part Number 2SC5200
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5200 Datasheet2SC5200 Datasheet (PDF)

  2SC5200   2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 9.75 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the ab.



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