DatasheetsPDF.com

IRF520

N-Channel Power MOSFET

Description

Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications su...

Fairchild Semiconductor

Download IRF520 Datasheet

Similar Datasheet

IRF500 50W to 500W HIGH POWER WIRE WOUND RESISTOR - ETC
IRF50N06 N-Channel MOSFET - YZPST
IRF510 N-Channel MOSFET Transistor - Inchange Semiconductor
IRF510 N-Channel Power MOSFET - Fairchild Semiconductor
IRF510 Power MOSFET - Vishay
IRF510 Power MOSFET - International Rectifier
IRF510A Advanced Power MOSFET - Fairchild Semiconductor
IRF510PBF HEXFET POWER MOSFET - International Rectifier
IRF510S Power MOSFET - International Rectifier
IRF510S Power MOSFET - Vishay

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)