Q62702-A1010 MHz Datasheet

Q62702-A1010 Datasheet, PDF, Equivalent


Part Number

Q62702-A1010

Description

Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)

Manufacture

Siemens Semiconductor Group

Total Page 4 Pages
Datasheet
Download Q62702-A1010 Datasheet


Q62702-A1010
BAR 64...
Silicon PIN Diode
l High voltage current controlled
l RF resistor for RF attenuator and swirches
l Freqency range above 1 MHz
l Low resistance and short carrier lifetime
l For frequencies up to 3 GHz
Type
BAR 64
BAR 64-04
BAR 64-05
BAR 64-06
Marking
POs
PPs
PRs
PSs
Ordering code
(tape and reel)
Q62702-A1041
Q62702-A1010
Q62702-A1042
Q62702-A1043
Pin configuration Package 1)
1 23
A - C SOT-23
A C C/A
A A C/C
C C A/A
Maximum ratings per diode
Parameter
Reverse voltage
Forward current
Total Power dissipation TS 90°C
BAR64-04,-05,-06
TS 65°C
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance
Junction-ambient 1)
BAR64
BAR64-04,-05,-06
Junction-soldering point
BAR64
BAR64-04,-05,-06
Symbol
VR
IF
Ptot
Tj
Top
Tstg
Rth JA
Rth JS
BAR 64
200
100
250
250
150
-55 +150°C
-55...+150°C
Unit
V
mA
mW
°C
°C
°C
320
500
240
340
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 23.02.95

Q62702-A1010
BAR 64...
Electrical characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
DC characteristics per diode
Breakdown voltage
IR = 5 µA
Forward voltage
IF = 50 mA
Diode capacitance
VR = 20 V, f = 1 MHz
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
IF = 100 mA, f = 100 MHz
Charge carrier lifetime
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
Forward current rF= f (TS;TA*)
* mounted on alumina
BAR64
mA
TS
IF
TA
Symbol
min.
Value
Unit
typ. max.
V(BR)
VF
CT
rf
τL
Ls
V
200 -
-
V
- - 1.1
pF
- 0.23 0.35
- 12.5 20
-- 2.1 3.8
0.85 1.35
µs
- 1.55 -
- 1.4 - nH
Forward current rF= f (TS;TA*)
per each diode BAR64-05,-05,-06
mA
TS
I
F TA
TS TA
Semiconductor Group
2
TS TA
Edition A01, 23.02.95


Features BAR 64... Silicon PIN Diode l High vol tage current controlled l RF resistor f or RF attenuator and swirches l Freqenc y range above 1 MHz l Low resistance an d short carrier lifetime l For frequenc ies up to 3 GHz Type BAR 64 BAR 64-04 B AR 64-05 BAR 64-06 Marking POs PPs PRs PSs Ordering code (tape and reel) Q6270 2-A1041 Q62702-A1010 Q62702-A1042 Q6270 2-A1043 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings per diode Parameter Re verse voltage Forward current Total Pow er dissipation TS ≤ 90°C BAR64-04,-0 5,-06 TS ≤ 65°C Junction temperature Operating temperature range Storage te mperature range Thermal resistance Junc tion-ambient BAR64 BAR64-04,-05,-06 1) Symbol BAR 64 200 100 250 250 150 -55 +150°C -55...+150°C Unit V mA mW ° C °C °C VR IF Ptot Tj Top Tstg Rth JA ≤ 320 ≤ 500 K/W Junction-solde ring point BAR64 BAR64-04,-05,-06 Rth JS ≤ 240 ≤ 340 ___________________ ______ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 .
Keywords Q62702-A1010, datasheet, pdf, Siemens Semiconductor Group, Silicon, PIN, Diode, High, voltage, current, controlled, RF, resistor, for, RF, attenuator, and, swirches, Freqency, range, above, 1, MHz, 62702-A1010, 2702-A1010, 702-A1010, Q62702-A101, Q62702-A10, Q62702-A1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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