Q62702-A1017 Datasheet PDF Download, Siemens Semiconductor Group





(PDF) Q62702-A1017 Datasheet Download

Part Number Q62702-A1017
Description Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Manufacture Siemens Semiconductor Group
Total Page 3 Pages
PDF Download Download Q62702-A1017 Datasheet PDF

Features: Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for b alanced mixers, phase detectors and mod ulators ESD: ElectroStatic Discharge s ensitive device, observe handling preca utions! Type BAT 114-099 Marking S7 Ord ering Code (taped & reel) Q62702-A1017 Pin Configuration Package1) SOT-143 1) Dimensions see chapter Package Outlin es Maximum Ratings (per diode) Paramet er Reverse voltage Forward current Oper ation temperature Storage temperature P ower dissipation, TS ≤ 70 °C Symbol Limit Values 4 90 − 55 to + 150 − 5 5 to + 150 100 Unit V mA °C °C mW VR IF Top Tstg Ptot Semiconductor Group 326 01.97 BAT 114-099 Thermal Resis tance (per diode) Parameter Junction to soldering point Junction to ambient1) 1) Symbol Limit Values ≤ 780 ≤ 10 20 Unit K/W K/W RthJS RthJA Mounted on alumina 15 mm × 16.7 mm to 0.7 mm Electrical Characteristics (per diode; TA = 25 °C) Parameter Breakdown voltag e IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching1) IF =.

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Silicon Dual Schottky Diode
BAT 114-099
Features
• High barrier diode for balanced mixers, phase
detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
BAT 114-099
Marking Ordering Code
(taped & reel)
S7 Q62702-A1017
Pin Configuration
Package1)
SOT-143
1) Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter
Reverse voltage
Forward current
Operation temperature
Storage temperature
Power dissipation, TS 70 °C
Symbol
VR
IF
Top
Tstg
Ptot
Limit Values
4
90
55 to + 150
55 to + 150
100
Unit
V
mA
°C
°C
mW
Semiconductor Group
326
01.97

        






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